unisonic technologies co., ltd 12N90 preliminary power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2011 unisonic technologies co., ltd qw-r502-593.b 12a, 900v n-channel power mosfet ? description the utc 12N90 is an n-channel enhancement mode power mosfet useing utc?s advanced technology to provide customers with planar stripe and dmos technology. this technology is specialized in allowing a minimum on-state resistance and superior switching performance. it also can withstand high energy pulse in the avalanche and commutation mode. the utc 12N90 is universally applied in high efficiency switch mode power supply. ? features * r ds(on) = 0.95 ? @v gs = 10 v * high switching speed * 100% avalanche tested ? symbol 1 to-220 1 to-220f1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 12N90l-ta3-t 12N90g-ta3-t to-220 g d s tube 12N90l-tf1-t 12N90g-tf1-t to-220f1 g d s tube note: pin assignment: g: gate d: drain s: source
12N90 preliminary power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-593.b ? absolute maximum ratings (t c = 25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 900 v gate-source voltage v gss 30 v drain current continuous (t c =25c) i d 12 a pulsed (note 2) i dm 48 a avalanche current (note 2) i ar 12 a power dissipation to-220 p d 225 w to-220f1 51 w junction temperature t j +150 c storage temperature t stg -55~+150 c note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width lim ited by maximum junction temperature ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case to-220 jc 0.56 c/w to-220f1 2.43 c/w ? electrical characteristics (t c = 25c unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 900 v breakdown voltage temperature coefficient bv dss /t j i d =250a, referenced to 25c 1.0 v/c drain-source leakage current i dss v ds =900v, v gs =0v 10 a v ds =720v, t c =125c 100 gate- source leakage current forward i gss v gs =+30v, v ds =0v 100 na reverse v gs =-30v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 3.0 5.0 v static drain-source on-state resistance r ds ( on ) v gs =10v, i d =6a 0.8 0.95 ? dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz 4200 pf output capacitance c oss 315 pf reverse transfer capacitance c rss 90 pf switching parameters total gate charge q g v gs =10v, v ds =720v, i d =12a (note 1, 2) 123 155 nc gate to source charge q gs 27 45 nc gate to drain charge q gd 49 80 nc turn-on delay time t d ( on ) v dd =450v, i d =12a, r g =25 ? (note 1, 2) 18 50 ns rise time t r 12 50 ns turn-off delay time t d ( off ) 51 100 ns fall-time t f 18 50 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 12 a maximum body-diode pulsed current i sm 48 a drain-source diode forward voltage v sd i s =12a, v gs =0v 1.4 v body diode reverse recovery time t r r v gs =0v, i s =12a, di f /dt=100a/s (note 1) 1000 ns body diode reverse recovery charge q rr 17.0 c note: 1. pulse test: pulse width 300s, duty cycle 2% 2. essentially independent of operating temperature
12N90 preliminary power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-593.b ? test circuits and waveforms v gs d.u.t. r g 10v v ds r l v dd pulse width 1 s duty factor 0.1% v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms 50k ? 0.3 f dut v ds same type as d.u.t. 0.2 f 12v v gs 3ma 10v charge q gs q gd q g v gs gate charge test circuit gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
12N90 preliminary power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-593.b ? test circuits and waveforms(cont.) same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
12N90 preliminary power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-593.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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